This article is cited in 4 papers

Polymers

Electroluminescence mechanism in light emitting field effect transistors based on perovskite nanocrystal films in a semiconductor polymer matrix

O. P. Chikalova-Luzina^a, V. M. Vyatkin^b, I. P. Shcherbakov^a, A. N. Aleshin<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The mechanisms of radiative recombination and electroluminescence in the structures based on the films of perovskite nanocrystals CsPbBr$_{3}$ in the matrix of a semiconductor polymer MEH-PPV have been considered. It has been shown that two mechanisms determine the electroluminescence intensity in light-emitting field-effect transistors with active layers based on the MEH-PPV films:CsPbBr$_{3}$ (nanocrystals): recombination of the charged carriers injected into the polymer matrix and recombination at the interface polymer/perovskite nanocrystals. The results of theoretical and experimental studies have shown that the superlinear dependence of the electroluminescence intensity on the level of electrical excitation in the light-emitting field-effect transistors based on MEH-PPV:CsPbBr$_{3}$ (nanocrystals) is due to the mechanism of electron tunneling through a potential barrier at the electrode.

Keywords: conducting polymers, perovskite nanocrystals, light emitting field effect transistors, electroluminescence.

Received: 06.04.2020
Revised: 06.04.2020
Accepted: 09.04.2020

DOI: 10.21883/FTT.2020.08.49623.073

 English version: Physics of the Solid State, 2020, 62:8, 1500–1505

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