This article is cited in 1 paper

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Semiconductors

Photoluminescence of heterostructures with ultrathin CdTe/ZnTe quantum wells

N. G. Filosofov^a, A. Yu. Serov^a, G. Karczewski^b, V. F. Agekyan^a, H. Mariette^c, V. P. Kochereshko<sup>d

a</sup> Saint Petersburg State University
^b Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
^c Institut Neel CNRS, Grenoble, France
^d Ioffe Institute, St. Petersburg

Abstract: Heterostructures of the CdTe/ZnTe type with ultrathin quantum wells are studied. Lines of light and heavy excitons bound to the CdTe layers are observed in the spectra. It is found that the photoluminescence intensity of the light exciton is comparable to the luminescence intensity of the heavy exciton. The temperature shifts of these lines are different, and the lines are intersected at a temperature of 65 K. The estimates of the energy and wave functions of the exciton states have made it possible to clarify parameters of some bands and excitons in such structures.

Keywords: quantum wells, excitons, photoluminescence.

Received: 26.03.2020
Revised: 26.03.2020
Accepted: 02.04.2020

DOI: 10.21883/FTT.2020.09.49771.30H

 English version: Physics of the Solid State, 2020, 62:9, 1633–1638

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