This article is cited in 1 paper

XXV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9-12, 2021
Semiconductors

Negative magnetoresistance in the $n$-InSb/YIG structure

Yu. V. Nikulin^ab, A. V. Kozhevnikov^a, Yu. V. Khivintsev^ab, M. E. Seleznev^ab, Yu. A. Filimonov<sup>ab

a</sup> Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences, Saratov, Russia
^b Saratov State University, Saratov, Russia

Abstract: It is shown that for the $n$-InSb/YIG/GGG (YIG – yttrium iron garnet, GGG – gallium-gadolinium garnet) structure in the tangent to the substrate plane geometry of magnetization ($H$ < 10 kOe) at a temperature $T\approx$ 300 K the magnetoresistance of about 1% is negative, while for $n$-InSb/GGG structure, in the same magnetization geometry, the magnetoresistance is positive (an increase in electrical resistance in a magnetic field). The negative magnetoresistance effect in the InSb/YIG/GGG structure is due to the influence of the YIG magnetization on the conduction electrons of InSb (proximity effect) and the magnitude of the effect is determined by the value of YIG magnetization and parameters of InSb films.

Keywords: indium antimonide, negative magnetoresistance, YIG.

Received: 09.04.2021
Revised: 09.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTT.2021.09.51248.06H

 English version: Physics of the Solid State, 2021, 63:10, 1496–1500

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