Continued publication of the materials of the seminar in FTT N 12/21
Semiconductors

Study of relaxers distribution in thin layers of amorphous MoTe$_{2}$

R. A. Castro, S. E. Khachaturov, A. A. Kononov, N. I. Anisimova

Herzen State Pedagogical University of Russia, St. Petersburg, Russia

Abstract: Recently, transition metal dichalcogenides have come into the spotlight after they have been found to become direct semiconductor in the monolayer level. The paper presents the results of the study of the relaxers distribution in layers of amorphous molybdenum ditelluride obtained by high-frequency magnetron sputtering. According to the obtained values of relaxation parameters $\alpha$ and $\beta$, the transition from an asymmetric distribution to a symmetric distribution of relaxators at temperature $T=283$ K can be stated. The existence of maxima on the temperature dependence of relaxation times $\tau_{max}=f(T)$ was found, which can be associated with phase transitions in the studied system.

Keywords: molybdenum ditelluride, relaxers distribution, thin layers, phase transitions.

Received: 08.07.2021
Revised: 08.07.2021
Accepted: 15.07.2021

DOI: 10.21883/FTT.2021.11.51587.165

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