Annealing effect on inelastic relaxation in silicon doped with $\mathrm{Pd}$

M. S. Tulyaganova, P. Kh. Khabibullaev, M. S. Yunusov

Institute for Nuclear Physics of Uzbekistan Academy of Sciences

UDC: 621.315.592:546.28'796:621.785.3:539.37

Received: 20.03.1984

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