Low dimensional systems

Contribution of phonons to the line width of surface electronic states on Pd(111)

I. Yu. Sklyadneva^abc, S. S. Tsirkin^d, S. V. Eremeev^bd, R. Heid^c, K.-P. Bohnen^c, E. V. Chulkov<sup>ae

a</sup> Donostia International Physics Center (DIPC), San Sebastián/Donostia, Basque Country, Spain
^b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences, Tomsk
^c Karlsruher Institut für Technologie, Institut für Festkörperphysik, Karlsruhe, Germany
^d Tomsk State University
^e Departamento de Física de Materiales and Centro Mixto CSIC–UPV/EHU, Facultad de Ciencias Químicas, UPV/EHU, San Sebastián/Donostia, Basque Country, Spain

Abstract: This paper reports on the results of calculations of the contributions from the electron-phonon interaction to the line width of the surface electronic states on Pd(111). The calculations have been performed both using an ab initio method based on the electron density functional theory and the linear response method in the pseudopotential representation with a mixed basis set and using a model that includes the description of the electronic structure of the surface by a one-dimensional model potential. The phonon contribution to the width of the lines has been analyzed for all the surface states under consideration. It has been demonstrated that the line width due to the electron-phonon interaction exhibits a weak anisotropy and that the character of changes in the line width with variations in the energy and the wave vector of the electron depends first of all on the particular surface energy band.

Received: 16.05.2011

 English version: Physics of the Solid State, 2011, 53:12, 2508–2514

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