Semiconductors

Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

E. S. Demidov, A. N. Mikhaylov, A. I. Belov, M. V. Karzanova, N. E. Demidova, Yu. I. Chigirinskii, A. N. Shushonov, D. I. Tetelbaum, O. N. Gorshkov, E. A. Evropeitsev

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 nm) by an order of magnitude in the case of long-wavelength excitation and an enhancement of the ytterbium photoluminescence (980 nm) by almost 50 times and erbium photoluminescence by 25 times in the case of short-wavelength pumping. This luminescence enhancement is explained by the formation of additional channels of transfer of external excitation by silicon nanocrystallites in porous silicon to impurity ytterbium and erbium ions in tungsten-tellurite glass.

Received: 24.05.2011

 English version: Physics of the Solid State, 2011, 53:12, 2415–2420

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