Mechanical properties, strength physics and plasticity

Study of the dynamics and mechanisms of deformation of thin chalcogenide As(Ge)$_2$Se$_3$ films by nanoindentation

V. S. Bilanich^a, S. S. Kikemezey^ab, I. M. Rizak^c, V. M. Rizak<sup>a

a</sup> Uzhgorod National University
^b Chemical Research Center, Hungarian Academy of Sciences, Budapest, Hungary
^c National Aerospace University "Kharkiv Aviation Institute"

Abstract: The mechanical properties of As$_2$Se$_3$ and Ge$_2$Se$_3$ thin films have been studied by the method of quasi-static nonoindentation. The mechanisms of formation and recovery of the indentations in the studied materials have been analyzed under conditions of their local loading. It has been revealed that the deformation mechanism of the chalcogenide films changes in going from As$_2$Se$_3$ to Ge$_2$Se$_3$. It has been found that, during deformation of the As$_2$Se$_3$ film under the indenter, the accumulation of plastic deformation prevails, and, for the Ge$_2$Se$_3$ film, the substantial mechanism is the relaxation of its deformation.

Received: 05.04.2011

 English version: Physics of the Solid State, 2011, 53:11, 2316–2320

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