Semiconductors

Temperature features of electrical resistivity of two-dimensional electrons in scattering by a correlated distribution of impurity ions in doped thin layers

V. M. Mikheev

Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: Spatial correlations of impurity ions in doped thin layers at finite temperatures have been considered in the model of hard spheres on a plane. It has been shown that, in systems with separate doping, the correlations in the arrangement of impurity ions are weakened by thermal motion of electrons at sufficiently low temperatures (below the liquid-helium temperature). The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in heterostructures with separate doping have been investigated using the Al$_x$Ga$_{1-x}$As/GaAs heterostructure as an example.

Received: 12.04.2011

 English version: Physics of the Solid State, 2011, 53:11, 2210–2219

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