Semiconductors

Effect of ionizing irradiation on the mechanism of current passage in TlInSe$_2$ single crystals

R. S. Madatov, A. I. Nadzhafov, T. B. Tagiev, M. R. Gazanfarov, M. A. Mehrabova

Institute of radiation problems, ANAS

Abstract: The temperature dependence of the electrical conductivity and current-voltage characteristics of $\gamma$-irradiated TlInSe$_2$ single crystals with an electrical resistivity of $\sim$10$^8$ $\Omega$ cm have been investigated. It has been established that the anomalies of the conductivity observed in weak electric fields and at low dozes of irradiation are related to the decomposition of neutral complexes containing an interstitial cation atom. In strong electric fields, a thermal-field ionization of traps occurs. The main mechanism of radiation defect formation is the formation of complexes [$V^-_{\mathrm{In}}$In$^+_i$], [$V^-_{\mathrm{Se}}$Se$^-_i$], and others with the structural defects characteristic of unirradiated crystals. The activation energy, trap concentrations, and the potential well shape near the traps have been determined.

Received: 05.04.2011

 English version: Physics of the Solid State, 2011, 53:11, 2205–2209

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