Low dimensional systems

Morphology of nanostructures formed on the van der Waals surface of GaSe layered crystals annealed in sulfur vapor

A. P. Bakhtinov^a, Z. R. Kudrynskyi^a, O. S. Litvin<sup>b

a</sup> Chernivtsi Department, Frantsevich Institute for Problems of Materials Science
^b Institute of Semiconductor Physics NAS, Kiev

Abstract: The morphology of nanostructures, which were grown on the (0001) van der Waals surface of layered GaSe crystals and annealed under thermodynamically equilibrium conditions at high pressures of sulfur vapor, has been investigated using atomic force microscopy. The morphology and phase composition of the nanostructures are determined by the deformation and chemical interactions between the vapor phase and the crystal surface and by the thermodynamic conditions of annealing. Elements of nanostructures are formed as small Ga$_2$S$_3$ nanocrystallites, pyramidal quantum dots, and quantum rings on the defective (0001) van der Waals surface that contains nanosized indentations (nanocavities) and liquid gallium.

Received: 21.02.2011

 English version: Physics of the Solid State, 2011, 53:10, 2154–2159

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