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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2011 Volume 53, Issue 9, Pages 1820–1825 (Mi ftt13464)

This article is cited in 1 paper

Low dimensional systems

Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

G. L. Klimchitskaya, A. B. Fedortsov, Yu. V. Churkin, V. A. Yurova

North-Western State Correspondence Technical University

Abstract: The Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures with parameters close to those used in the production of semiconductor devices has been calculated. It has been shown that the Casimir force pressure increases tenfold and reaches several tens of pascals as the insulator thickness decreases from 80 to 40 nm. The metal layer thickness and the presence of the surface layer with a high charge carrier concentration in the semiconductor have a slight effect on calculated values of the Casimir pressure.


 English version:
Physics of the Solid State, 2011, 53:9, 1921–1926

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© Steklov Math. Inst. of RAS, 2026