This article is cited in 13 papers

Dielectrics

Concentration and temperature dependences of the oxygen migration energy in yttrium-stabilized zirconia

N. V. Tokii, B. I. Perekrestov, D. L. Savina, I. A. Danilenko

Galkin Donetsk Institute for Physics and Engineering, Donetsk

Abstract: The ionic conductivity of zirconia with different contents of the yttrium stabilizing impurity has been studied using impedance spectroscopy in the temperature range 300–910$^\circ$C. A deviation of the temperature dependence of the conductivity in the crystallite bulk from the Arrhenius equation has been revealed. A quantum-mechanics estimation of the influence of the yttrium content on the oxygen-vacancy migration barrier as a function of its distance to the yttrium atom has been carried out. A two-barrier mechanism of the dependence of the oxygen migration energy on the yttrium content in zirconia due to anion vacancy trapping by yttrium has been proposed. Analytical dependences of the concentration of free (active) anion vacancies and the activation energy of ionic conductivity on the temperature and stabilizing impurity content have been obtained.

Received: 09.03.2011

 English version: Physics of the Solid State, 2011, 53:9, 1827–1831

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