This article is cited in 5 papers

Semiconductors

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum

L. K. Orlov^a, E. A. Steinman^b, N. L. Ivina^c, V. I. Vdovin<sup>d

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^c Volgo-Vyatka Public Service Academy, Nizhni Novgorod, 603950, Russia
^d Interdisciplinary Resource Center for Nanotechnologies, St. Petersburg State University

Abstract: The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures ($T_{\mathrm{gr}}\sim$ 900–700$^\circ$C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser ($\lambda_{\mathrm{exit}}$ = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet ($\sim$3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. The correlation between these components and the specific features of the crystal structure of the grown silicon carbide layers has been analyzed.

Received: 19.01.2011

 English version: Physics of the Solid State, 2011, 53:9, 1798–1805

Bibliographic databases:

•