Yu. V. Zorenko, V. P. Savchin, V. I. Gorbenko, T. I. Voznyak, T. E. Zorenko, V. M. Puzikov, A. Ya. Dan’ko, S. V. Nizhankovskii, “Luminescence and scintillation properties of Y$_3$Al$_5$O$_{12}$ : Ce single crystals and single-crystal films”, Fizika Tverdogo Tela, 2011, Volume 53, Issue 8,Pages 1542

This article is cited in 12 papers

Impurity centers

Luminescence and scintillation properties of Y$_3$Al$_5$O$_{12}$ : Ce single crystals and single-crystal films

Yu. V. Zorenko^ab, V. P. Savchin^a, V. I. Gorbenko^a, T. I. Voznyak^a, T. E. Zorenko^a, V. M. Puzikov^c, A. Ya. Dan’ko^c, S. V. Nizhankovskii^c

^a Ivan Franko National University of L'viv
^b Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Bydgoszcz, Poland
^c Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov

Abstract: Luminescence and scintillation properties of Y$_3$Al$_5$O$_{12}$ : Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y$_3$Al$_5$O$_{12}$ : Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO–B$_2$O$_3$ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y$_3$Al$_5$O$_{12}$ : Ce single crystals on their growth conditions and concentrations of YAl antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce$^{3+}$ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y$_3$Al$_5$O$_{12}$ : Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce$^{3+}$ ion luminescence decay during high-energy excitation due to the absence of YAl antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y$_3$Al$_5$O$_{12}$ : Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb$^{2+}$ ion impurity as a flux component and is slightly lower ($\sim$25%) than the light yield of single crystals grown by the Czochralski method.

Received: 12.10.2010
Accepted: 10.02.2011