RUS  ENG
Full version
JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2011 Volume 53, Issue 8, Pages 1498–1504 (Mi ftt13411)

This article is cited in 7 papers

Semiconductors

Dynamics of formation of the mosaic structure of porous silicon during prolonged anodic etching in electrolytes with an internal current source

K. B. Tynyshtykbaev, Yu. A. Ryabikin, K. A. Mit', B. A. Rakymetov, T. Aitmukan

Institute of Physics and Technology, Ministry of Education and Science of the Republic of Kazakhstan, Almaty, 050032, Republic of Kazakhstan

Abstract: The spontaneous self-organization of a porous surface mosaic structure in the form of islands of oxidized por-Si nanocrystallites separated by silicon ledges has been observed during prolonged anodic etching of $p$-Si (100) in electrolytes with an internal current source. The por-Si mosaic structure is spontaneously formed as a result of relaxation of an elastically strained layer of the porous surface. The self-organization of the mosaic structure of the por-Si surface, island sizes, and the period of their arrangement are controlled by a number of factors arising in the complex heterophase system electrolyte/por-Si/$c$-Si/during etching, i.e., the spatio-temporal distribution of point defects of interstitials $I_{\mathrm{Si}}$ and vacancies $V_{\mathrm{Si}}$ in the $c$-Si surface region, the formation of capillary fluctuation forces at the electrolyte/por-Si/$c$-Si/interface, the elastic deformation forces induced by the lattice parameter mismatch between the oxidized por-Si nanocrystallites and the $c$-Si matrix. The conditions responsible for the manifestation of these forces depend on the self-consistent parameters of etching of the complex heterophase electrochemical system electrolyte/por-Si/$c$-Si/with an internal current source, including the electrode characteristics and cell parameters.

Received: 09.08.2010
Accepted: 24.01.2011


 English version:
Physics of the Solid State, 2011, 53:8, 1575–1580

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026