This article is cited in 14 papers

Semiconductors

Giant dielectric relaxation in TlGaTe$_2$ crystals

R. M. Sardarly, O. A. Samedov, A. P. Abdullayev, F. T. Salmanov

Institute of radiation problems, ANAS

Abstract: The conductivity and temperature-frequency dependences of the permittivity of TlGaTe$_2$ crystals have been studied. Strong dielectric relaxation has been revealed. It has been shown that the mechanism of dielectric relaxation is associated with hopping of Tl ions over vacancies in the thallium sublattice due to the transition of the system to the superionic state.

Received: 17.11.2010
Accepted: 18.01.2011

 English version: Physics of the Solid State, 2011, 53:8, 1564–1568

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