This article is cited in 8 papers

Semiconductors

Influence of the regime of plastic deformation on the magnetic properties of single-crystal silicon Cz–Si

A. I. Dmitriev^a, A. A. Skvortsov^b, O. V. Koplak^c, R. B. Morgunov^a, I. I. Proskuryakov<sup>d

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^b Moscow State Technical University "MAMI"
^c Research and Training Center "Physical and Chemical Materials Science", Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine, Kiev, 01033, Ukraine
^d Institute of Fundamental Problems of Biology, Russian Academy of Sciences, Pushino, Moscow Region

Abstract: A variation has been revealed in electron paramagnetic resonance spectra of single-crystal silicon Cz–Si plates plastically deformed by bending and torsion. The plastic deformation of the silicon plates is accompanied by the introduction of dislocations ($\sim$10$^7$ cm$^{-2}$) and leads to the appearance of new lines in the electron paramagnetic resonance spectrum of the sample. The paramagnetic centers introduced during bending and torsion, as well as their electron paramagnetic resonance spectra, differ from those previously studied under conditions of uniaxial deformation. The plastic deformation results in a significant increase in the diamagnetic component of the magnetic susceptibility, which exceeds the increase in the paramagnetic component for the magnetic susceptibility of the Cz–Si crystals.

Received: 12.01.2011

 English version: Physics of the Solid State, 2011, 53:8, 1547–1553

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