Abstract:
The kinetics of electrical breakdown of thin (15–70 $\mu$m) layers of polymers and ceramics in a constant-sign field at 77–480 K has been investigated. The temperature dependences of the longevity (breakdown waiting time) of both dielectrics have been found to be similar to each other. At elevated temperatures, the longevity of the dielectrics varies exponentially with increasing temperature, and at reduced temperatures, it is temperature-independent (there is an athermal plateau). The mechanisms of elementary events controlling the process of preparation of the dielectrics for breakdown at elevated and reduced temperatures are the thermal-fluctuation over-barrier electron transition from trap to trap and the tunneling (under-barrier) transition, respectively. The hopping electron transport in the field direction gives rise to critical space charges causing breakdown of the dielectrics. The transition barrier heights (trap depths) have been determined. The low-temperature longevities of the polymer and the ceramic have been found to be similar, whereas the transition barrier for the ceramic is much higher than that for the polymer and the applied field in the former case is significantly (by a factor of tens) lower than that in the latter case. Electron traps in the polymer are adequately described by the Coulomb center model, whereas this is not the case for the ceramic.
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