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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2011 Volume 53, Issue 6, Pages 1230–1233 (Mi ftt13369)

This article is cited in 2 papers

Surface physics, thin films

Anisotropic magnetoresistance of partially relaxed SrRuO$_3$ films

Yu. A. Boikov, V. A. Danilov

Ioffe Institute, St. Petersburg

Abstract: The SrRuO$_3$ films (50 nm thick) grown by laser evaporation on (001)(LaAlO$_3$)$_{0.3}$ + (Sr$_2$AlTaO$_6$)$_{0.7}$ substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9$^\circ$. Ferromagnetic ordering of spins in the SrRuO$_3$ films was manifested by a change in the slope of the temperature dependence of their electrical resistivity $\rho$ at $T\approx$ 155 K. For a magnetic field H parallel to the measuring current, the maximum values ($\sim$7.5%) of the magnetoresistance MR = [$\rho(\mu_0H$ = 5 T) – $\rho(\mu_0H$ = 0)]/$\rho(\mu_0H$ = 0) were observed at temperatures of about 100 K. At $T$ = 95 K ($\mu_0H$ = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.

Received: 30.11.2010


 English version:
Physics of the Solid State, 2011, 53:6, 1298–1301

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