This article is cited in 7 papers

Mechanical properties, strength physics and plasticity

Electrical properties of plastically deformed silicon due to its interaction with an iron impurity

O. V. Feklisova, E. B. Yakimov

Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The change in the recombination properties of plastically deformed silicon as a result of its interaction with an iron impurity introduced by diffusion at 1000$^\circ$C has been studied using scanning electron microscopy and deep level transient spectroscopy. The recombination activity of dislocations and slip planes behind dislocations has been found to increase due to the accelerated formation of iron precipitates at these defects. Based on the measurements of the electron-beam-induced current, the concentration of the formed precipitates has been estimated, and their sizes have been calculated to be several hundred nanometers.

Received: 03.09.2010
Accepted: 12.12.2010

 English version: Physics of the Solid State, 2011, 53:6, 1240–1243

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