This article is cited in 1 paper

Semiconductors

Theory of the Fano resonance in impurity excitation spectra of $p$-GaAs

V. Ya. Aleshkin, D. I. Burdeiny, M. S. Zholudev

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The features observed in the impurity photoconductivity spectra of gallium arsenide doped with shallow acceptors have been described theoretically. The features are caused by the interaction of holes with polar optical phonons. The Fano resonances associated with both the ground and excited acceptor states have been considered. The calculated widths of the resonances are in agreement with available experimental data.

Received: 11.10.2010

 English version: Physics of the Solid State, 2011, 53:6, 1176–1185

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