This article is cited in 3 papers

Semiconductors

Diffusion in porous silicon carbide

E. L. Pankratov^a, M. G. Mynbaeva^b, E. N. Mokhov^b, K. J. Mynbaev<sup>b

a</sup> Nizhny Novgorod State University of Architecture and Civil Engineering
^b Ioffe Institute, St. Petersburg

Abstract: By the example of vanadium and erbium diffusion in porous silicon carbide, the semiconductor porous structure modification during thermal annealing has been simulated and the effect of this modification on impurity diffusion has been considered. A comparison of calculated and experimental profiles of the erbium and vanadium distributions in porous silicon carbide shows that the consideration of porous structure modification due to vacancy redistribution makes it possible to adequately describe diffusion in the porous semiconductor.

Received: 25.08.2010
Accepted: 08.11.2010

 English version: Physics of the Solid State, 2011, 53:5, 943–949

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