This article is cited in 2 papers

Semiconductors

Long-term relaxation of the current in a naturally disordered Pb$_3$O$_4$ semiconductor

V. T. Avanesyan, M. P. Sevryugina

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: Charge transfer has been studied in metal-dielectric-metal structures based on polycrystalline layers of lead orthoplumbate Pb$_3$O$_4$ with a binder–cyanoethyl ester of polyvinyl alcohol, deposited on a glass substrate with a conducting ITO film. Time dependences of the current have been investigated in the temperature range $T$ = 300–370 K and in the range of dc electric field strengths $E$ = 2 $\times$ 10$^5$–9 $\times$ 10$^5$ V/m. Flowing of the relaxation polarization current leads to charge accumulation in the near-electrode region. Experimental dependences agree with the relay race mechanism of charge transfer with the participation of deep local levels. Microparameters of charge transfer are determined upon varying the experimental conditions.

Received: 28.10.2010

 English version: Physics of the Solid State, 2011, 53:5, 939–942

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