This article is cited in 4 papers

Low dimensional systems

Mobility of 2D-electrons in scattering on a correlated distribution of impurity ions in doped thin layers

V. M. Mikheev

Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The spatial correlations of impurity ions in doped thin layers have been considered. A model of hard spheres on the plane has been developed for describing the correlations. In this model, an analytical expression has been obtained for the structure factor of 2D-electrons. The concentration dependences of the mobility of 2D-electrons in heterostructures with separate doping have been investigated using Al$_x$Ga$_{1-x}$As/GaAs as an example.

Received: 16.08.2010

 English version: Physics of the Solid State, 2011, 53:4, 864–871

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