This article is cited in 4 papers

Low dimensional systems

Quantization of the electronic spectrum and localization of electrons and holes in silicon quantum dots

V. A. Gritsenko^a, K. S. Zhuravlev^a, V. A. Nadolinnyi<sup>b

a</sup> Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: The quantization of the electronic spectrum has been observed in photoluminescence experiments for silicon quantum dots prepared by implantation of silicon into silicon dioxide SiO$_2$. The diameter of silicon quantum dots has been estimated as 1.8 nm. Injection of electron and holes is accompanied by the appearance of a paramagnetic resonance signal with the g factor equal to 2.006. This result unambiguously indicates that silicon clusters are the electron and hole traps in SiO$_2$.

Received: 13.07.2010

 English version: Physics of the Solid State, 2011, 53:4, 860–863

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