This article is cited in 14 papers

Surface physics, thin films

Initial stages of the growth and magnetic properties of cobalt films on the Si(100)2 $\times$ 1 surface

I. I. Pronin^a, M. V. Gomoyunova^a, S. M. Soloviev^a, O. Yu. Vilkov^bc, D. V. Vyalikh<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg State University
^c Institut für Festkörperphysik, Technische Universität Berlin, Dresden, Germany

Abstract: The initial stages of the growth of cobalt films on the Si(100)2 $\times$ 1 surface and the dynamics of variation in their phase composition, electronic structure, and magnetic properties with a coverage increasing in the range 1–20 $\mathring{\mathrm{A}}$ resolution photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in Co 3p electron photoemission. It has been shown that a film of metallic cobalt starts to grow at a coverage of $\sim$7 $\mathring{\mathrm{A}}$. This process is preceded by the stages involving the formation of the interface cobalt silicide and the Co-Si solid solution. It has also been demonstrated that, at coverages below 15 $\mathring{\mathrm{A}}$, the sample surface is coated by segregated silicon. The ferromagnetic ordering of the film in the surface plane has been found to follow a threshold character and set in at a coverage of $\sim$6 $\mathring{\mathrm{A}}$. A further increase in the coverage in the range 8–16 $\mathring{\mathrm{A}}$ is accompanied by a slower increase in the remanence of the film.

Received: 14.07.2010

 English version: Physics of the Solid State, 2011, 53:3, 616–621

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