A. F. Orlov, L. A. Balagurov, I. V. Kulemanov, N. S. Perov, E. A. Gan'shina, L. Yu. Fetisov, A. Rogalev, A. Smekhova, J. C. Cezar, “Intrinsic ferromagnetism created by vacancy injection in a semiconductor oxide Ti$_{1-x}$Co$_x$O$_{2-\delta}$”, Fizika Tverdogo Tela, 2011, Volume 53, Issue 3,Pages 452

This article is cited in 4 papers

Magnetism

Intrinsic ferromagnetism created by vacancy injection in a semiconductor oxide Ti$_{1-x}$Co$_x$O$_{2-\delta}$

A. F. Orlov^a, L. A. Balagurov^a, I. V. Kulemanov^a, N. S. Perov^b, E. A. Gan'shina^b, L. Yu. Fetisov^b, A. Rogalev^c, A. Smekhova^c, J. C. Cezar^c

^a JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry, Moscow
^b Lomonosov Moscow State University
^c European Synchrotron Radiation Facility, Grenoble, France

Abstract: The possibility of creating room-temperature intrinsic ferromagnetism in a highly doped oxide semiconductor has been investigated. The results indicate that such state of a ferromagnetic semiconductor can be achieved by magnetron sputtering deposition of a semiconductor oxide doped with a transition metal followed by low-temperature vacuum annealing.

Received: 12.05.2010