This article is cited in 16 papers

Semiconductors

Effect of ionizing radiation on the dielectric characteristics of TlInSe$_2$ and TlGaTe$_2$ single crystals

A. U. Sheleg^a, V. G. Hurtavy^a, S. N. Mustafaeva^b, E. M. Kerimova<sup>b

a</sup> Scientific-Practical Materials Research Centre of NAS of Belarus
^b Institute of Physics Azerbaijan Academy of Sciences

Abstract: The temperature dependences of the electrical conductivity and the permittivity of TlInSe$_2$ and TlGaTe$_2$ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10$^{16}$ cm$^{-2}$ have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity $\sigma$ and the permittivity $\varepsilon$ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe$_2$ and TlGaTe$_2$ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences $\sigma=f(T)$ and $\varepsilon=f(T)$. Electron irradiation at a doze of 10$^{16}$ cm$^{-2}$ does not affect the phase transition temperatures of the crystals under investigation.

Received: 30.06.2010
Accepted: 17.08.2010

 English version: Physics of the Solid State, 2011, 53:3, 472–475

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