This article is cited in 3 papers

Semiconductors

Impedance of Si/SiO$_2$ composites in the vicinity of the percolation threshold

N. A. Poklonskii^a, N. I. Gorbachuk^a, D. Aleinikova<sup>b

a</sup> Belarusian State University, Minsk
^b College of State Island, CUNY, Staten Island, N.Y., USA

Abstract: The Si/SiO$_2$ composites, in which the concentration of the conducting silicon phase is close to the percolation threshold, have been prepared using the ceramic technology and studied at an alternating current. It has been found that an increase in the potential difference in a direct-current electric field leads to a decrease in the dispersion of time constants of dielectric spacers in the "Si grain-SiO$_2$ spacer-Si grain" structures forming a conducting cluster in the composite.

Received: 28.06.2010

 English version: Physics of the Solid State, 2011, 53:3, 462–466

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