Semiconductors

Effect of bismuth dopant on the dielectric properties of modified As$_2$Se$_3$

R. A. Castro, N. I. Anisimova, V. A. Bordovskii, G. I. Grabko

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: A comparative analysis has been performed for the specific features of the dispersion of the components of the complex permittivity for pure and bismuth-doped thin films of amorphous arsenic triselenide. A correlation between the experimental data and theoretical calculations of similar characteristics obtained in previous studies has been found. The mechanisms of the effects observed have been discussed.

Received: 28.06.2010

 English version: Physics of the Solid State, 2011, 53:3, 458–461

Bibliographic databases:

•