Abstract:
The concentration dependence of the entropy of doped Mott-Hubbard insulators has been considered within the $t$–$J$ model. It has been shown that a change in the type and statistics of charge carriers as compared to the Fermi gas leads to a radical change in the entropy $s$, in particular, to the giant growth of the entropy upon doping. The quantity $(\partial s)/(\partial x)\approx k_B$ is approximately consistent with the experimental data for HTSC cuprates in the pseudogap phase.