This article is cited in 6 papers

Polymers

Electrical and optical properties of light-emitting field-effect transistors based on MEH-PPV polymer composite films with ZnO nanoparticles

A. N. Aleshin, I. P. Shcherbakov, F. S. Fedichkin, P. E. Gusakov

Ioffe Institute, St. Petersburg

Abstract: The optical and electrical properties of light-emitting field-effect transistor structures with an active layer based on nanocomposite films containing zinc oxide (ZnO) nanoparticles dispersed in the matrix of the soluble conjugated polymer MEH-PPV have been investigated. It has been found that the current-voltage characteristics of the field-effect transistor based on MEH-PPV: ZnO films with a composite component ratio of 2: 1 have an ambipolar character, and the mobilities of electrons and holes in these structures at a temperature of 300 K reach high values up to $\sim$1.2 and $\sim$1.4 cm$^2$/V s, respectively, which are close to the mobilities in fieldeffect transistors based on ZnO films. It has been shown that the ambipolar field-effect transistor based on MEH-PPV: ZnO films emits light at both positive and negative gate bias voltages. The mechanisms of injection, charge carrier transport, and radiative recombination in the studied structures have been discussed.

Received: 14.05.2012

 English version: Physics of the Solid State, 2012, 54:12, 2508–2513

Bibliographic databases:

•