Semiconductors

Irradiation of germanium nanocrystals with reactor neutrons

Issai Shlimak^a, Shai Levy^a, Tiecheng Lu^b, A. N. Ionov<sup>c

a</sup> Bar-Ilan University, Department of Physics, Ramat-Gan, Israel
^b Department of Physics, Sichuan University, Chengdu, China
^c Ioffe Institute, St. Petersburg

Abstract: The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The sample irradiation with a high dose of fast reactor neutrons resulted in lattice destruction and amorphization of a part of nanocrystals, leaving off a significant part well retained. Thus indicating that this nano-based material may have potential for the fabrication of devices operating under extreme conditions. Radiation defect annealing and full restoration of the nanocrystal structure were observed at 800$^\circ$C; however, the average size of nanocrystals and their spatial distribution were changed.

Received: 18.04.2012

 English version: Physics of the Solid State, 2012, 54:11, 2201–2204

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