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Fizika Tverdogo Tela, 2012 Volume 54, Issue 11, Pages 2051–2057 (Mi ftt13064)

This article is cited in 13 papers

Semiconductors

Band gap and type of optical transitions at the interband absorption edge in solid solutions based on bismuth telluride

A. N. Weisa, L. N. Luk'yanovab, V. A. Kutacovb

a St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg

Abstract: The spectra of optical absorption in multicomponent $n$- and $p$-type solid solutions based on bismuth and antimony chalcogenides with substitutions in both sublattices of Bi$_2$Te$_3$ have been investigated. It has been found that, in all the solid solutions studied, just as in the parent compound Bi$_2$Te$_3$, direct allowed transitions occur at the interband absorption edge at $T$ = 300 K. The band gap $E_g$ in the $n$-Bi$_{2-x}$Sb$_x$Te$_{3-y-z}$Se$_y$S$_z$ solid solutions weakly increases with increasing number of substituted atoms in the Bi and Te sublattices. These atomic substitutions do not leads to an increase in $E_g$ as compared to that of the $n$-Bi$_2$Te$_{2.7}$Se$_{0.3}$ composition. An analysis of the optical absorption spectra suggests that the solid solutions under consideration are weakly degenerate, a conclusion supported by the earlier studies of the thermoelectric and galvanomagnetic properties. It has been established that, in the conduction band of the Bi$_{1.8}$Sb$_{0.2}$Te$_{2.7}$Se$_{0.15}$S$_{0.15}$ solid solution, there is an additional extremum lying above the main extremum at a distance no more than 0.1 eV.

Received: 12.04.2012


 English version:
Physics of the Solid State, 2012, 54:11, 2182–2188

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