Semiconductors

Thermal properties of manganese-doped ZnO polycrystalline films

Kh. T. Igamberdiev^a, Sh. U. Yuldashev^ba, T. W. Kang^a, V. O. Pelenovich^bc, Sh. M. Rakhimova^b, T. Kh. Akhmedov<sup>b

a</sup> Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul, Korea
^b Section of Thermophysics, Uzbekistan Academy of Sciences
^c Department of Physics, Wuhan University, Wuhan, China

Abstract: The thermal conductivity and heat capacity of manganese-doped zinc oxide polycrystals have been studied in the temperature range 30–300 K. A substantial influence of the secondary phase or MnO clusters formed as a result of doping on the temperature dependences of thermophysical properties of polycrystalline zinc oxide films has been shown.

Received: 02.02.2012
Accepted: 19.03.2012

 English version: Physics of the Solid State, 2012, 54:10, 1957–1960

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