This article is cited in 4 papers

Surface physics, thin films

Thermochemical nitridation of sapphire substrates of different crystallographic orientations

S. V. Nizhankovskii, A. A. Krukhmalev, H. Sh.-ogly Kaltaev, N. S. Sidelnikova, A. T. Budnikov, V. F. Tkachenko, M. V. Dobrotvorskaya, E. A. Vovk, S. I. Krivonogov, G. T. Adonkin

Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov

Abstract: This paper presents the results of the study of the influence of physicochemical parameters of thermochemical nitridation of sapphire substrates of different crystallographic orientations in an N$_2$ + (CO, H$_2$) reducing atmosphere on structural characteristics, composition, and kinetics of AlN layer formation. The effective diffusion coefficients of nitrogen in sapphire at $T$ = 1473–1773 K have been determined. The temperature dependences of the structural quality, thickness, and roughness of the AlN layer surface have been found; their strong dependence on the composition and reduction potential of the nitridation atmosphere has been shown. The structural models of matching the AlN and sapphire lattices during thermochemical nitridation have been proposed.

Received: 29.02.2012

 English version: Physics of the Solid State, 2012, 54:9, 1896–1902

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