This article is cited in 11 papers

Phase transitions

Effect of ionizing radiation on the dielectric characteristics of TlInS$_2$ and TlGaS$_2$ single crystals

A. U. Sheleg^a, V. G. Hurtavy^a, V. V. Shautsova^a, S. N. Mustafaeva^b, E. M. Kerimova<sup>b

a</sup> Scientific-Practical Materials Research Centre of NAS of Belarus
^b Institute of Physics Azerbaijan Academy of Sciences

Abstract: The dependences of the permittivity and electrical conductivity of TlInS$_2$ and TlGaS$_2$ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity $\sigma$ significantly increases, whereas the permittivity $\varepsilon$ decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences $\sigma=f(T)$ and $\varepsilon=f(T)$ are observed in the regions characteristic of phase transitions in TlInS$_2$. Irradiation of the TlInS$_2$ and TlGaS$_2$ crystals with electrons to doses of 10$^{15}$ and 10$^{16}$ cm$^{-2}$ does not affect their phase transition temperatures. The dispersion curves of the permittivity $\varepsilon$ of the TlGaS2 crystal have been constructed.

Received: 30.01.2012

 English version: Physics of the Solid State, 2012, 54:9, 1870–1874

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