This article is cited in 3 papers

Dielectrics

Systematic features of diffusion and aggregation of intrinsic defects in dielectric crystals

A. P. Voitovich^a, V. S. Kalinov^a, E. F. Martynovich^b, A. N. Novikov^a, A. P. Stupak<sup>a

a</sup> B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Institute of Lazer Physics of Russian Academy of Sciences, Irkutsk Branch

Abstract: It has been shown that the kinetics of reactions involving mobile intrinsic defects in the crystal is described by the exponential dependence in many cases. Based on this dependence and the fact that random-walk diffusion occurs in the cases under consideration, the distribution of diffusion paths traveled by mobile defects before entering into the reaction has been found. An expression for the arithmetic mean of these paths has been obtained. For lithium fluoride crystals irradiated with gamma-rays, the pre-exponential factors in the temperature dependences of the diffusion coefficients of $F^+_2$ color centers and anion vacancies have been determined and the diffusion coefficients of these types of defects have been estimated.

Received: 11.01.2012
Accepted: 06.02.2012

 English version: Physics of the Solid State, 2012, 54:9, 1768–1775

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