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Fizika Tverdogo Tela, 2012 Volume 54, Issue 8, Pages 1466–1469 (Mi ftt12965)

This article is cited in 7 papers

Semiconductors

Influence of the composition on electrical properties of low-temperature ionic conductors in the Cu$_{1-x}$Ag$_x$GeAsSe$_3$ system

O. L. Kheifets, N. V. Melnikova, A. L. Filippov, È. F. Shakirov, A. N. Babushkin, L. L. Nugaeva

Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: The chalcogenides Cu$_{1-x}$Ag$_x$GeAsSe$_3$ ($x$ = 0.5, 0.8, 0.9) have been synthesized and their electrical properties have been studied at low temperatures. Compounds of this type are electron-ionic conductors with a mixed character of conduction. It has been shown that the substitution of copper atoms for a part of silver atoms in the AgGeAsSe$_3$ compound leads to a decrease in the total conductivity, a decrease in the fraction of ionic component of the conductivity, a significant increase in the polarization times, an increase in the temperature of the onset of a noticeable contribution (as compared to the electron contribution) of the ionic transport, and a decrease in the activation energy of carriers.

Received: 13.12.2011
Accepted: 25.01.2012


 English version:
Physics of the Solid State, 2012, 54:8, 1562–1565

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