This article is cited in 3 papers

Impurity centers

Influence of correlations in a flat distribution of impurity ions on the mobility of two-dimensional electrons at low temperatures

V. M. Mikheev

Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a spacer of arbitrary width have been investigated using the Al$_x$Ga$_{1-x}$As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane.

Received: 10.10.2011
Accepted: 22.12.2011

 English version: Physics of the Solid State, 2012, 54:7, 1451–1458

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