Abstract:
The effect of low-energy ($W$ = 8 keV) low-dose ((0.3–7.3) $\times$ 10$^2$ Gy) radiation and a dc magnetic field ($B$ = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.