A. I. Dmitriev, O. V. Koplak, R. B. Morgunov, “Effect of temperature conditions of ion implantation on percolation ferromagnetism in Ge$_{0.98}$Mn$_{0.02}$ thin films”, Fizika Tverdogo Tela, 2012, Volume 54, Issue 7,Pages 1292

This article is cited in 2 papers

Magnetism

Effect of temperature conditions of ion implantation on percolation ferromagnetism in Ge$_{0.98}$Mn$_{0.02}$ thin films

A. I. Dmitriev^a, O. V. Koplak^b, R. B. Morgunov^a

^a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^b Research and Training Center "Physical and Chemical Materials Science", Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine, Kyiv, 01033, Ukraine

Abstract: The effect of temperature conditions of ion implantation on the magnetic properties of Ge$_{0.98}$Mn$_{0.02}$ thin films has been studied. It has been shown that a decrease in the implantation temperature significantly increases the temperature of percolation magnetic ordering in the subsystem of dispersed Mn$^{2+}$ ions. It has been demonstrated that the observed effect can be due to suppression of the thermally activated aggregation of Mn$^{2+}$ ions into Ge$_3$Mn$_5$ clusters and increase in their concentration in the dispersed state.

Received: 15.11.2011