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Fizika Tverdogo Tela, 2012 Volume 54, Issue 7, Pages 1276–1280 (Mi ftt12933)

This article is cited in 1 paper

Semiconductors

Tin $U^-$-centers formed through nuclear transformations in vitreous arsenic sulfides and selenides

G. A. Bordovskii, M. Yu. Kozhokar, A. V. Marchenko, A. S. Naletko, P. P. Seregin

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: It has been shown using the Mössbauer emission spectroscopy for isotope $^{119}$Sn that impurity tin atoms formed after the radioactive decay of $^{119}$Sb atoms in vitreous arsenic sulfide and selenide are localized in arsenic sites and play the role of two-electron centers with negative correlation energy. The most of daughter $^{119m}$Sn atoms formed after the radioactive decay of the $^{119m}$Te atoms in glasses are arranged in chalcogen sites; they are electrically inactive. Considerable recoil energy of daughter atoms in the case of decay of $^{119m}$Te leads to the appearance of $^{119m}$Sn atoms shifted from chalcogen sites.

Received: 16.11.2011


 English version:
Physics of the Solid State, 2012, 54:7, 1353–1357

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