This article is cited in 4 papers

Semiconductors

Charge transport mechanism in intercalated Cu$_x$HfSe$_2$ compounds

V. G. Pleshchev^a, N. V. Baranov^ab, N. V. Melnikova^a, N. V. Selezneva<sup>a

a</sup> Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: Alternating current resistivity measurements have been performed for the first time on intercalated Cu$_x$HfSe$_2$ (0 $\le x\le$ 0.18) samples using the impedance spectroscopy technique together with direct current measurements. The results obtained indicate the hopping mechanism of charge transport in Cu$_x$HfSe$_2$ compounds. It has been found that an increase in the copper content in samples enhances relaxation processes. The ac conductivity exhibits frequency dispersion described by the universal dynamic response.

Received: 11.01.2012

 English version: Physics of the Solid State, 2012, 54:7, 1348–1352

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