This article is cited in 3 papers

Dielectrics

Electron-excited luminescence of SiO$_2$ layers on silicon

A. P. Baraban, V. A. Dmitriev, Yu. V. Petrov, K. A. Timofeeva

Saint Petersburg State University

Abstract: An analysis of cathodoluminescence and electroluminescence spectra of Si–SiO$_2$ structures suggests a conclusion concerning the processes involved in excitation of the luminescence centers generated in the UV spectral region and their localization. The electroluminescence observed in this region of the spectrum is generated in excitation of luminescence centers localized in the immediate vicinity of the Si–SiO$_2$ phase boundary. In the case of cathodoluminescence, the observed emission bands at $\sim$4.3 and $\sim$2.7 eV appear in excitation of the luminescence of silylene centers at the Si–SiO$_2$ phase boundary.

Received: 16.11.2011

 English version: Physics of the Solid State, 2012, 54:6, 1149–1152

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