This article is cited in 2 papers

Semiconductors

Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

S. A. Masalov, K. V. Kalinina, V. P. Evtikhiev, S. V. Ivanov

Ioffe Institute, St. Petersburg

Abstract: The field emission injection of low-energy electrons ($E_e\approx$ 10 eV) into the ZnSe/CdSe/ZnSe heterostructure has been considered. The probe of the ultra-high-vacuum tunneling microscope has been used as a field emitter. It has been shown that the energy of injected electrons is sufficient for impact ionization in ZnSe. The impact ionization creates a high concentration of nonequilibrium carriers in the near-surface ZnSe layer. The transport of nonequilibrium carriers in the heterostructure under study has been simulated. The electric field of the near-surface space charge and surface recombination have been taken into account. The calculation has demonstrated that filling the active region of CdSe with nonequilibrium carriers is highly efficient.

Received: 25.10.2011

 English version: Physics of the Solid State, 2012, 54:6, 1126–1130

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