This article is cited in 6 papers

Magnetism

Domain walls, magnetization, and magnetoelectric effect in bismuth ferrite films

Z. V. Gareeva^ab, A. K. Zvezdin<sup>a

a</sup> Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences

Abstract: The specific features of the antiferromagnetic domain structure, magnetization, and polarization induced by an inhomogeneous micromagnetic distribution in films of bismuth ferrite multiferroics have been investigated. It has been shown that the magnetic domain structure correlates with the ferroelectric domain structure, and the character of the rotation of the antiferromagnetic vector depends on the type of ferroelectric domain walls. An asymmetry in the distribution of the antiferromagnetic vector has been observed for the cases of 109$^\circ$ and 71$^\circ$ ferroelectric domain walls. It has been demonstrated that there are differences in the distributions of the polarization and magnetization in bismuth ferrite films with ferroelectric domains separated by 109$^\circ$ and 71$^\circ$ walls. The basic mechanisms responsible for the magnetization in domain walls in multiferroics have been considered.

Received: 24.06.2011
Accepted: 27.10.2011

 English version: Physics of the Solid State, 2012, 54:5, 1070–1078

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