Abstract:
The processes of polarization fatigue in PbTiO$_3$ and Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_3$ films on silicon substrates have been studied by the method of switching in rectangular pulsed fields. Dependences of the switchable polarization, the maximum switching current $i_{\mathrm{max}}$, and the switching time $\tau_s$ on the number of switching cycles have been obtained from the data on the switching currents. It has been shown that the mobility of domain walls is retained in the fatigue processes and the observed fatigue is connected with switching off a fraction of the switchable volume due to pinning of reverse domain nuclei by charged defects.