This article is cited in 7 papers

Proceedings of the XIX All-Russian Conference on Physics of Ferroelectrics (VKS-XIX) (Moscow, Russia, June 19-23, 2011

Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

E. V. Gushchina^a, A. V. Ankudinov^ab, L. A. Delimova^a, V. S. Yuferev^a, I. V. Grekhov<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Thin films based on lead zirconate titanate with stoichiometric composition near the morphotropic boundary have been studied using atomic-force microscopy methods. The dependence of the local conductivity on the local polarization direction has been observed for all samples, independently of substrate type, deposition method, and film thickness. It has been shown that the current response to the applied voltage exhibits a long current relaxation, about several tens of seconds, which is two to three orders of magnitude greater than the current relaxation time in an external circuit, associated with the ferroelectric domain switching. The conductivity features have been explained by recharging of traps localized at ferroelectric grain boundaries near electrodes and involved in polarization charge screening.

 English version: Physics of the Solid State, 2012, 54:5, 1005–1007

Bibliographic databases:

•